How To Use The Ultrasonic Cleaner To Clean The Monocrystalline Silicon Chips in The Semiconductor Industry?

With the development of semiconductor material technology, higher requirements are also put forward for the specifications and quality of silicon wafers, and the demand for large-diameter silicon wafers suitable for micro processing will increasingly increase in the market. Semiconductors, chips, integrated circuits, design, layout, chips, manufacturing, and processes are currently widely used worldwide with advanced cutting, grinding, polishing, and clean packaging processes, making significant progress in film production technology. The introduction of the latest cutting-edge technology has led to the trial production and development of high-performance chips such as SOI entering the stage of mass production. In response, silicon wafer manufacturers have also increased their investment in equipment for 300mm silicon wafers, with further refinement of design rules. By using ultrasonic cleaning technology, the ultrasonic frequency is swept back and forth within a reasonable range during the cleaning process, driving the cleaning solution to form a fine reflux, which quickly removes dirt from the surface of the workpiece while being peeled off by the ultrasonic, thereby improving cleaning efficiency.

Ultrasonic cleaning method and its placement direction

Place the washed and ground silicon wafers horizontally on a fence shaped quartz rod frame above the bottom of the cleaning tank. Under the condition of ensuring that there is deionized water height and continuous flow in the cleaning tank, use an ultrasonic oscillator located at the bottom of the cleaning tank for cleaning. The ultrasonic frequency is 40KHz. Turn the ground silicon wafers over every 5 minutes and continue to over wash until no black pollutants emerge on the surface of the washed silicon wafers. The wall of the cleaning tank for ultrasonic cleaning of single crystal silicon wafers is equipped with an inlet and outlet, and the bottom of the tank is equipped with an ultrasonic oscillator. Inside the cleaning tank, there is a frame for placing single crystal silicon wafers. The bottom wall of the frame is formed by a fence shaped quartz rod, and the plane is lower than the level of deionized water. The entire frame is supported by support feet in the cleaning tank.

During the specific implementation, the distance between the quartz rod and the bottom wall of the cleaning tank is 15 centimeters. During cleaning, the monocrystalline silicon wafer can be placed flat on a quartz rod, replacing the existing vertical superwashing with a flat superwashing, eliminating the phenomenon of residual pollutants accumulating on the surface of the silicon wafer in the vertical superwashing state, resulting in unclean cleaning of local areas. Additionally, the soft flower basket carrying the silicon wafer can absorb and block the transmission of ultrasonic waves, resulting in unclean cleaning of local areas on the surface of the silicon wafer, It has the advantages of simpler structure and reduced water consumption.